Approximation of temperature dependences of the basic MOSFET parameters for engineering applications
Abstract
Approximation of temperature dependences of the basic MOSFET parameters for engineering applications
Incoming article date: 31.10.2014The experimental temperature dependences of the basic MOSFET parameters (the transconductance parameter and threshold voltage) in a wide temperature range covering both cryogenic temperature and regular temperatures are considered. The methods which acceptable for engineering practice and allow to approximate the experimental temperature dependences of the basic MOSFET parameters by the simple analytical expressions in the form of linear or power functions are presented. The investigated MOSFETs was designed for work as active elements of amplifying devices. Temperature dependences of the basic MOSFET parameters are needed for estimation of the sensitivity, prediction of uptime and optimizing the choice of refrigerant for low-noise amplifiers.
Keywords: MOSFET, transconductance parameter, threshold voltage, temperature dependencies, approximation, cryogenic temperatures