Method development for calculation of temperature and thermoelastic fields during sapphire growth
Abstract
Method development for calculation of temperature and thermoelastic fields during sapphire growth
Incoming article date: 15.03.2016The author presents the method of calculation of temperature and thermoelastic fields during sapphire crystals growth by horizontal directed crystallization method. Realization of the offered technique allows to carry out the analysis of changes of the temperature and thermoelastic fields in the crystal taking into account spatial and geometrical characteristics of heaters by means of computing experiment. On the basis of the analysis we can carry out redistribution of defects in sapphire, and increasment quality of the grown crystals.
Keywords: sapphire, temperature fields, thermoelastic stresses, horizontal directed crystallization method, technique, computing experiment