Simulation design of silicon solar cells using the program PC1D

Abstract

Simulation design of silicon solar cells using the program PC1D

Sayenko A.V., Paliy A.V., Bespoludin V.V.

Incoming article date: 25.06.2016

Created single-stage model of silicon solar cell using PC1D v.5.9 program, designed to simulate the photovoltaic devices. In the process of simulation change the level of doping and thickness of the n + type layer of the front, as well as applied texturing the front surface. The influence of the doping level and the thickness of the n + type layer in the photovoltaic solar cell characteristics. It was determined that with the increase of the doping level and the thickness of the front n + -layer a decrease in the efficiency of solar cells. It was found that the use of texturing the front surface leads to an increase in efficiency and is associated with reduced reflection losses and an increase in the photocurrent.

Keywords: Silicon solar cell thickness, doping levels, texturing, current-voltage characteristic