OPTICAL AND ELECTRICAL PARAMETERS OF HETEROSTRUCTURES IN THE PHYSICS OF SEMICONDUCTOR MATERIALS: MODELING AND EXPERIMENT
Abstract
OPTICAL AND ELECTRICAL PARAMETERS OF HETEROSTRUCTURES IN THE PHYSICS OF SEMICONDUCTOR MATERIALS: MODELING AND EXPERIMENT
Incoming article date: 02.12.2018This paper contains an analysis of the modeling results of the electrophysical parameters of light-emitting GaInAsSb / GaSb solid solutions. The model takes into account three types of current - drift, thermionic emission and tunneling through potential barriers. In the work, graphs of radiation power versus current strength and current-voltage characteristic (IVC) of the LED device are plotted. Modeling indicators based on the features of the band structure of semiconductor systems have been built. Experimental results were discussed, which showed satisfactory agreement with the data obtained on the basis of calculations.
Keywords: solid solutions, Sim Windows 1,5, radiating structures, currents limited by space charge, electrophysical parameters