Modification of surface of gas sensor’s sensitive layer by the electric disintegration

Abstract

Modification of surface of gas sensor’s sensitive layer by the electric disintegration

S.A. Bogdanov, A.G. Zakharov, I.V. Pisarenko

Incoming article date: 08.02.2013

The peculiarities of modification of silicon’s surface structure by the electric disintegration were researched. It was established that the electric disintegration of sensitive layer’s surface increases its effective area and the density of surface state. It also forms the deep energy levels in the forbidden zone of the semiconductor which are conditioned by atoms of the electrode’s material and by dislocation. In total it makes possible to modify the sensitivity and selectivity of gas sensors.

Keywords: modification of surface, sensitive layer, gas sensor, electric disintegration