The possibilities of waveguide elements realization in the structure of multilayered integrated chips of centimeter and millimeter ranges with SIW (Substrate Integrated Waveguide)-technology application are considered. The approaches allowing effectively using in new structures the algorithms and techniques of the electrodynamic analysis and synthesis of passive devices on classical all-metal waveguides are offered. Advantages of use in SIW structure the waveguides of complex cross-section are considered on the example of the microwave band-pass filter.
Keywords: A.A. Gadzieva, V.V. Zemlyakov, S.V. Krutiev