The article is devoted to the problem of theoretical research and development of perovskite-based solar cells to optimize their design and increase efficiency. The paper presents a numerical simulation of the transfer and accumulation of charge carriers in the planar p – i – n heterostructure of a solar cell. The simulation is based on a stationary physico-topological model based on the diffusion-drift system of semiconductor equations. The efficiency of solar cells for different perovskite film thickness was obtained. It has been established that the maximum efficiency of the optimized design of a solar cell is about 27% with a perovskite film thickness of 500-700 nm and a defect concentration in it of the order of 1012 cm-3.
Keywords: Numerical simulation, solar cell, perovskite, film thickness, defect concentration, current-voltage characteristic