In this work new circuit solutions of R-S-latch and D-trigger having nonvolatile electrically programmable memory and nonvolatile shift register are presented. It shows that nonvolatile R-S-latch can be effectively used as a memory cell and simultaneously as write and read circuits for it, thus it makes possible to increase reliability of read operation from EEPROM at the expense of differential read for every bit.
Keywords: CMOS, R-S-latch, D-tirgger, shift register, EEPROM, nonvolatile memory