Currently, laser annealing are widely used to create a polycrystalline silicon film, which is promising for use in thin film solar cell, and transistors, liquid crystal displays and sensors due to recrystallization of amorphous and nanocrystalline silicon films. The study of morphology and surface conductivity of single-crystal silicon film on a glass substrate by laser annealing power. Laser annealing is carried Nd: YAG laser with a wavelength of 532 nm, speed of movement of the stage with a specimen of 5 mm/s and a laser power ranging from 34 to 86 watts. The laser beam was focused on the sample in the form of a narrow line width of 10 microns and 60 mm in length. The dependence of the size of the nanocrystals and the conductivity of silicon films on the power of the laser annealing radiation. It is shown that the power of the laser radiation in the range of 60 to 70 W is optimal for the best electrical parameters silicon film for the purpose of its use in high-performance thin-film solar cells.
Keywords: silicon film, laser annealing, surface morphology, electrical conductivity, thin film solar cell