Experimental studies on the formation of nanoscale structures on the surface of gallium arsenide were carried out. To obtain a modified layer on the substrate surface, the method of focused ion beams was used, and the method of plasma-chemical etching was used for the subsequent formation of structures. According to the research results, structures with a width of 90 to 196 nm and a depth of 2 to 9.6 nm were formed. The results of the studies can be applied as structures for the subsequent formation of quantum dots during molecular beam epitaxy.
Keywords: Nanotechnology, focused ion beam, plasma treatment, atomic force microscope, GaAs